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FDS6680A
November 2004
FDS6680A
Single N-Channel, Logic Level, PowerTrench(R) MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
* 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 V RDS(ON) = 13 m @ VGS = 4.5 V * Ultra-low gate charge * High performance trench technology for extremely low RDS(ON) * High power and current handling capability
D D SO-8
D D
DD D D
5 6 7
4 3 2 1
Pin 1 SO-8
G SG SS SS S
TA=25oC unless otherwise noted
8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
30 20
(Note 1a)
Units
V A W
12.5 50 2.5 1.2 1.0 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1)
50 25
C/W
Package Marking and Ordering Information
Device Marking FDS6680A Device FDS6680A Reel Size 13'' Tape width 12mm Quantity 2500 units
(c)2004 Fairchild Semiconductor Corporation
FDS6680A Rev F1(W)
FDS6680A
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on)
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A
Min
30
Typ
Max Units
V
Off Characteristics
ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V 1 2 -4.9 7.8 9.9 11.0 25 64 1620 380 160 VGS = 15 mV,
(Note 2)
25 1 10 100 3
mV/C A A nA V mV/C 9.5 13 15 m
VDS = 24 V, VGS = 0 V, TJ=55C
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 10 V, ID = 12.5 A ID = 10.5 A VGS = 4.5 V, VGS = 10 V, ID = 12.5 A, TJ=125C VGS = 10 V, VDS = 15 V, VDS = 5 V ID = 12.5 A
ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr
A S pF pF pF 19 10 43 27 23 ns ns ns ns nC nC nC 2.1 0.73 28 18 1.2 A V ns nC
Dynamic Characteristics
VDS = 15 V, f = 1.0 MHz V GS = 0 V,
f = 1.0 MHz
1.3 10 5 27 15
Switching Characteristics
VDD = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
VDS = 15 V, VGS = 5 V
ID = 12.5 A,
16 5 5.8
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward (Note 2) VGS = 0 V, IS = 2.1 A Voltage Diode Reverse Recovery Time IF = 12.5 A, diF/dt = 100 A/s Diode Reverse Recovery Charge
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50C/W when mounted on a 1in2 pad of 2 oz copper
b) 105C/W when mounted on a .04 in2 pad of 2 oz copper
c) 125C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDS6680A Rev F1(W)
FDS6680A
Typical Characteristics
50
2.2
VGS = 10V 4.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2 VGS = 3.5V 1.8 1.6 1.4 1.2 1 0.8 4.0V 4.5V 5.0V 6.0V 10V
40 ID, DRAIN CURRENT (A)
6.0V
4.5V 3.5V
30
20
10
3.0V
0 0 0.5 1 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2
0
10
20 30 ID, DRAIN CURRENT (A)
40
50
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.03 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 12.5A VGS = 10V
ID = 6.2A
0.025
1.4
1.2
0.02
TA = 125oC
0.015
1
0.8
0.01
TA = 25oC
0.005
0.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150
2
4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
BFigure 3. On-Resistance Variation with Temperature.
50
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A) 40
VGS = 0V
10
TA = 125oC
1
25oC
30
TA = 125oC
20
-55 C
o
0.1
-55oC
0.01 0.001 0.0001
10
25oC
0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4
0
0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6680A Rev F1(W)
FDS6680A
Typical Characteristics
10
2400
ID = 12.5A
VGS, GATE-SOURCE VOLTAGE (V)
f = 1 MHz VGS = 0 V
8 15V 6 20V 4
CAPACITANCE (pF)
VDS = 10V
1800
Ciss
1200
Coss
600
2
Crss
0 0 5 10 15 20 25 30
0 0 5
Qg, GATE CHARGE (nC)
10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics.
100
100s RDS(ON) LIMIT
Figure 8. Capacitance Characteristics.
50
ID, DRAIN CURRENT (A)
10
1s 10s
1ms 10ms 100ms
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE RJA = 125oC/W 40 TA = 25oC
30
1
VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25oC
DC
20
0.1
10
0.01 0.01
0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V)
100
0 0.001
0.01
0.1 1 t1, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 125 C/W P(pk) t1 t2
SINGLE PULSE
o
0.1
0.1 0.05 0.02 0.01
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6680A Rev F1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I13

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